2D Semiconductors,二維納米材料：半導(dǎo)體 |
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二維納米材料：半導(dǎo)體
2D Semiconductors
2D Semiconductor公司主要生產(chǎn)各種二維納米材料，包括MoS, WS2, MoWS2, TlGaSe2, TlInS2, CuFeTe, FeTeSe, GePbSe, MoReS2, MoSSe, MoWS2, MoWSe2, ReNbS2, ReNbSe2, SbAsS3, WSSe, CuS, GaSeTe, GaSSe, Ges, InSe, SnSe, TlGaS2, TlGaSe2, TlInS2, GaS, GaSe, GaTe, GeSe, CoSe2, CoTe2, HfS2, HfSe2, MoS2, MoSe2, MoSSe, MoTe2, MoWS2, MoWSe2, ReS2, ReSe2, SnS2, SnSe2, SnTe2, TaS2, TaSe2, WS2, WSe2, WSSe, WTe2, ZrS2, ZrTe2, TiS3, CdI2, PbI2, As2S3, Bi2S3, Black Phosphorus, In2Se3, PbGa2Se4, PbSnS2, SbAsS3, VSe2, PtSe2, TiTe2, TiS2, TiSe2, NbS2, NbSe2, FeSe, FeTe, CuFeTe, FeTeSe, Ca(OH)2, h-BN, MICA, Mg(OH)2, Bi2S3, Bi2Se3, Bi2Se3, Bi2Se3, Bi2Te3, Bi2Se3(1-x)Te3x, Bi4Te3(1-x)S3x, MoSe2, WSe2, MoSe2, WSe2, WS2, Pb3Sn4, Sb2FeS14, Pb5Sn3Sb2S13。
CVD monolayer MoS2 二硫化鉬
Large area CVD MoS2 monolayers are grown onto variety of substrates (SiO2, HfO2, and sapphire). The MoS2 monolayers are highly crystalline and luminescent. Ready for research and development.
CVD WS2 二硫化鎢
CVD monolayer WS2 二硫化鎢
Large area CVD WS2 monolayers are grown onto variety of substrates (SiO2, HfO2, and sapphire). The WS2 monolayers are highly crystalline and luminescent. Typical sample contains multiple flakes. Ready for research and development.
Bulk single crystal MoS2 (molybdenum disulfide) 二硫化鉬
Single Crystal Molybdenum Disulfide (MoS2) - Small 10x10mm 二硫化鉬
Single crystal molybdenum disulfide (2H-MoS2) at least 10x10mm sample.
Bulk single crystal MoS2 (molybdenum disulfide) 二硫化鉬
Single Crystal Molybdenum Disulfide (MoS2) - Medium 15x10mm 二硫化鉬
Single crystal molybdenum disulfide (2H-MoS2) at least 15x10mm sample.
Bulk single crystal MoS2 (molybdenum disulfide), 二硫化鉬
Single Crystal Molybdenum Disulfide (MoS2) - Large 15x20mm 二硫化鉬
Single crystal molybdenum disulfide (2H-MoS2) at least 15x20mm sample.
Graphene oxide solution 氧化石墨烯溶液
Graphene oxide solution 氧化石墨烯溶液
Semiconductor analog of graphene; Graphene oxide in solution. Ideal for optical studies and solvent sensing. Graphene oxide is a result of our unique and long synthesis route. Our methods yield large size flakes with excellent oxygen passivation, and yet least amount of defect. The result is optically luminescent 2D carbonous material. The band gap is at 2.5 eV but display sub-gaps at 2.2, 2.0, and 1.7 eV. Ideal for 2D material research.
Synthetic Molybdenum Disulfide (MoS2) 二硫化鉬
Synthetic Molybdenum Disulfide (MoS2) 二硫化鉬
The highest quality and the only commercially available synthetic MoS2. It has been developed at our facilities last three years and is superior to the naturally occurring single crystal MoS2. Typically, synthetic MoS2 shows high crystallinity, minimal residue / impurities, and the average grain size is larger than naturally occurring MoS2.
Ready for exfoliation. Large in size (8mmx8mm) and 2mm in thickness.
Ideal for yielding large monolayers.
Graphene oxide 氧化石墨烯
Graphene oxide (GO) 氧化石墨烯
Semiconductor analog of graphene; Graphene oxide. Our unique synthesis mimics on reducing the defect density and large grain sizes to yield optically active, reliable, and fully oxygen saturated graphene oxide. The band gap is at 2.5 eV but display sub-gaps at 2.2, 2.0, and 1.7 eV. Ideal for 2D material research. Easy to yield monolayers within 10 minutes using our optimized deposition technique.
Natural PbSnS2 硫錫鉛
Natural Lead Tin Disulfide (PbSnS2) 硫錫鉛
Natural PbSnS2 is a demiconductor with 1.4 eV band gap in the bulk form and is ternary compound of layered transitional metal dichalcogenides. We are proud to assist your research with this newly developed material in our facilities. Crystals are arbitrary in shape and measure 5mm and up. Highly crystalline. Ready for exfoliation.
In2Se3 crystal 三硒化二銦
Indium Selenide (In2Se3) 三硒化二銦
Highly crystalline, the most stable and layered phase of In2Se3. Crystals display 1.41 eV band gap and show strong Raman peaks. Sample size ranges from 3mmx3mm goes up to 5mmx5mm. Product display 99.995% purity with least amount of defects. Ready for exfoliation.
Single Crystal Gallium Telluride (GaTe) 碲化鎵
Single Crystal Gallium Telluride (GaTe) 碲化鎵
Highest quality Gallium Telluride available in the market. Perfectly layered. Ready for exfoliation onto various substrates. Easy to yield monolayers. GaTe is a layered semiconductor with direct bandgap at 1.7 eV in bulk and becomes 2.0 eV for monolayers. Grown by state-of-the-art growth techniques in our facilities with remarkable crystallinity. The size of the samples is typically around centimeter in size. GaTe has a layered structure with weak interlayer coupling. Single crystal GaTe comes ready for exfoliation and is ideal for 2D research.
Gallium Selenide (GaSe) 硒化鎵
Gallium Selenide (GaSe) 硒化鎵
Highest quality Gallium Selenide available in the market. Perfectly layered. Ready for exfoliation onto various substrates. Easy to yield monolayers. GaSe is a layered semiconductor with direct bandgap at 2.0 eV in bulk and becomes 2.3 eV for monolayers. Grown by state-of-the-art growth techniques in our facilities with remarkable crystallinity. The size of the samples is typically around centimeter in size. GaSe has a layered structure with weak interlayer coupling.
Single crystal GaSe comes ready for exfoliation and is ideal for 2D research.
Single crystal Germanium selenide (GeSe) 硒化鍺
Germanium Selenide (GeSe) 硒化鍺
Single crystal GeSe (germanium selenide) crystals are developed at our facilities using state-of-art techniques. Layered similar to MoS2 and can be isolated to monolayers. 1.3 eV semiconductor in bulk. They are highly crystalline and ready for exfoliation.
Tin diselenide (SnSe2) 二硒化錫
Tin diselenide (SnSe2) 二硒化錫
World record size single crystal SnSe2 (Tin diselenide) is one of the most recent member of the transition metal dichacogenides. Highly crystalline. Perfectly oriented. Free of defect. 99.995% pure. Crystals are larger than 1cm in size giving you plenty of material to work with.
Synthetic PbSnS2 硫錫鉛
Synthetic Lead Tin Disulfide (PbSnS2) 硫錫鉛
Synthetic PbSnS2 is a demiconductor with 1.4 eV band gap in the bulk form and is ternary compound of layered transitional metal dichalcogenides. We are proud to assist your research with this newly developed material in our facilities. Crystals are up to 10mmx10mm in size and highly crystalline. Ready for exfoliation.
Molybdenum Diselenide MoSe2 二硒化鉬
Single Crystal Molybdenum Diselenide (MoSe2) 二硒化鉬
Single crystal molybdenum diselenide (2H-MoSe2) comes in bulk. The sample comes with the data which includes Raman, photoluminescence, and 100x optical images.
Tungsten disulfide (WS2) 二硫化鎢
Tungsten Disulfide (WS2) 二硫化鎢
Defect free tungsten disulfide (2H-WS2) crystals have been developed in our facilities in the optical, electronic, and semiconducting grade %99.9995 certified purity. The crystal size is rather large with large domain size and 0.1 degree mosaic spread (perfectly layered). and therefore they are ideal for exfoliating large size monolayers. Single crystal WS2 are very easy to exfoliate and the monolayer yield is high (95% yield rate). The crystals were measured and confirmed by x-ray diffraction (XRD), x-ray photoelectron spectroscopy, Raman, photoluminescence, and Auger electron spectroscopy techniques. After exfoliation, single-layer WS2 show strong PL at 2.05 eV.
Tungsten diselenide (WSe2) 二硒化鎢
Tungsten Diselenide (WSe2) 二硒化鎢
High quality single crystal WSe2 is ideal for monolayer production. In the monolayer form our products yield very strong PL at 1.67 eV, sharp Raman peaks, and strong and narrow XRD signal.
Hafnium diselenide HfSe2
Hafnium diselenide (HfSe2)
Hafnium diselenide (HfSe2) is indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form. They are designed and optimized in the last three years to achieve perfect industrial semiconductor grade materials with: 1) excellent stoichiometry, 2) large single domain size, 3) single phase materials without any mixed phases or amorphous content, 4) perfect layered crystal ideal for exfoliation purposes with impressive mosaic spread 0.08 degrees, 5) unmatched purity -semiconductor grade (5.5N), 99.9995%.
Hafnium disulfide HfS2
Hafnium disulfide (HfS2)
Hafnium disulfide (HfS2) is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form. They are designed and optimized in the last three years to achieve perfect industrial semiconductor grade materials with: 1) excellent stoichiometry, 2) large single domain size, 3) single phase materials without any mixed phases or amorphous content, 4) perfect layered crystal ideal for exfoliation purposes with impressive mosaic spread 0.08 degrees, 5) unmatched purity -semiconductor grade (5.5N), 99.9995%.
Tin ditelluride (SnTe2) 碲化錫
Tin ditelluride (SnTe2) 碲化錫
Environmentally Stable SnTe2 crystals & monolayers:
Typically monolayer SnTe2 is not stable at ambient. Te atoms interact with H2O and O2 strongly through minor defect sites. Our novel (unconventional) growth technique eliminates defects and enables stability at ambient. Our engineers perfected crystal growth in one year to eliminate defects to achieve environmental stability. Environmentally stable Single crystal tin ditelluride (SnTe2) comes in bulk.
Single crystal ReS2 (Rhenium disulfide) 二硫化錸
Rhenium Disulfide (ReS2) 二硫化錸
Single crystal ReS2 (Rhenium disulfide) crystals are developed at our facilities using state-of-art techniques. Layered similar to MoS2 and can be isolated to monolayers. 1.5 eV semiconductor in bulk. Becomes 1.6 eV direct band gap semiconductor in monolayer form.
Gallium Sulfide (GaS) 硫化鎵
Gallium Sulfide (GaS) 硫化鎵
Highest quality Gallium sulfide available in the market. Perfectly layered. Ready for exfoliation onto various substrates. Easy to yield monolayers. GaS is a layered semiconductor with a bandgap at 2.4-2.5 eV. Grown by state-of-the-art growth techniques in our facilities with remarkable crystallinity. The size of the samples is typically centimeter in size. GaS has a layered structure with weak interlayer coupling. Single crystal GaSe comes ready for exfoliation and is ideal for 2D research.
n-type Tungsten disulfide (WS2) 二硫化鎢
n-type Tungsten Disulfide (WS2) 二硫化鎢
large n-type WS2 crystals: n-type WS2 monolayer's valleytronics and optical properties remain unknown to date. High quality single crystal n-type WS2 is ideal for monolayer production. Ideal for solving ohmic contact issues for high performance FET, sensor, detector, and solar cell devices.
Zirconium disulfide ZrS2 二硫化鋯
Zirconium disulfide (ZrS2) 二硫化鋯
Zirconium disulfide (ZrS2) is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form. They are designed and optimized in the last three years to achieve perfect industrial semiconductor grade materials with: 1) excellent stoichiometry, 2) large single domain size, 3) single phase materials without any mixed phases or amorphous content, 4) perfect layered crystal ideal for exfoliation purposes with impressive mosaic spread 0.08 degrees, 5) unmatched purity -semiconductor grade (5.5N), 99.9995%.
Tin disulfide SnS2 二硫化錫
Tin disulfide (SnS2) 二硫化錫
Distinct yellow colored Tin disulfide (SnS2) is indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form. They are designed and optimized in the last three years to achieve perfect industrial semiconductor grade materials with: 1) excellent stoichiometry, 2) large single domain size, 3) single phase materials without any mixed phases or amorphous content, 4) perfect layered crystal ideal for exfoliation purposes with impressive mosaic spread 0.08 degrees, 5) unmatched purity -semiconductor grade (5.5N), 99.9995%.
Molybdenum ditelluride MoTe2 二碲化鉬
Molybdenum ditelluride (MoTe2) 二碲化鉬
Environmentally Stable MoTe2 crystals & monolayers:
Typically monolayer MoTe2 is not stable at ambient. Te atoms interact with H2O and O2 strongly through minor defect sites. Our novel (unconventional) growth technique eliminates defects and enables stability at ambient. Our engineers perfected crystal growth in one year to eliminate defects to achieve environmental stability. Environmentally stable Single crystal molybdenum ditelluride (2H-MoTe2) comes in bulk. Please see the Photoluminescence and Raman spectrum taken directly from MoTe2 monolayer.
Tungsten ditelluride WTe2 二碲化鎢
Tungsten ditelluride (WTe2) 二碲化鎢
Single crystal WTe2 materials are available for sale.
n-type Tungsten diselenide (WSe2) 二硒化鎢
n-type Tungsten Diselenide (WSe2) 二硒化鎢
large n-type WSe2 crystals: n-type WSe2 monolayer's valleytronics and optical properties remain unknown to date. High quality single crystal n-type WSe2 is ideal for monolayer production. Ideal for solving ohmic contact issues for high performance FET, sensor, detector, and solar cell devices.
n-type Molybdenum disulfide (MoSe2) 二硒化鉬
n-type Molybdenum diselenide (MoSe2) 二硒化鉬
large n-type MoSe2 crystals by 2D semiconductors Inc. n-type MoSe2 monolayer's valleytronics and optical properties remain unknown to date. High quality single crystal n-type MoSe2 is ideal for monolayer production. Ideal for solving ohmic contact issues for high performance FET, sensor, detector, and solar cell devices.
p-type Molybdenum disulfide (MoSe2) 二硒化鉬
p-type Molybdenum diselenide (MoSe2) 二硒化鉬
large p-type MoSe2 crystals by 2D semiconductors Inc. p-type MoSe2 monolayer's valleytronics and optical properties remain unknown to date. High quality single crystal n-type MoSe2 is ideal for monolayer production. Ideal for solving ohmic contact issues for high performance FET, sensor, detector, and solar cell devices.
Tantalum disulfide (TaS2) 二硫化鉭
Tantalum disulfide TaS2 二硫化鉭
Single crystal TaS2 (Tantalum disulfide) crystals are developed at our facilities using state-of-art techniques. Each growth takes close to three months to provide you perfected crystals. Each crystal is highly crystalline and easy to exfoliate. TaS2 crystals display 0.3 eV band gap that are ideal for mid-far IR applications. Displays remarkable and unusual optical, mechanical, and electrical properties in the monolayers.
Tantalum diselenide (TaSe2) 二硒化鉭
Tantalum diselenide TaSe2 二硒化鉭
Environmentally Stable TaSe2 crystals & monolayers:
Typically monolayer TaSe2 is not stable at ambient. Ta orbitals and some Se atoms interact with H2O and O2 strongly through minor defect sites. Our novel (unconventional) growth technique eliminates defects and enables stability at ambient.
Single crystal ReSe2 (Rhenium diselenide) 二硒化錸
Rhenium Diselenide (ReSe2) 二硒化錸
Single crystal ReSe2 (Rhenium diselenide) crystals are developed at our facilities using state-of-art techniques. Layered similar to MoS2 and can be isolated to monolayers. 1.0 eV semiconductor in bulk. Becomes 1.3eV direct band gap semiconductor in monolayer form.
Molybdenum Tungsten Diselenide (MoWSe2) 硒鎢鉬
Molybdenum Tungsten Diselenide (MoWSe2) 硒鎢鉬
Large single crystal defect free molybdenum tungsten disulfide (Mo0.5W0.05Se2) crystals have been developed in our facilities. Molybdenum and Tungsten ratios are set at 50-50%. In the monolayer form, our MoWS2 products show very strong PL at 1.60 eV with intriguing valleytronic and optoelectronic properties.
phosphorene 磷
phosphorene 磷
The only true single crystal. We have developed phosphorene crystals which is made out of 100% phosphorus. Crystals are layered and display strong Raman signals, sharp XRD peaks. Crystals are 99.9995-99.9998% pure and perfectly layered. Crystals display large single crystal domain with 0.05 degree mosaic spread (monolayers are perfectly stacked onto each other). Ideal for exfoliation down to monolayer phosphorene.
black phosphorus 黑磷
black phosphorus 黑磷
The only true single crystal. We have developed black phosphorus (phosphorene) crystals which is made out of 100% phosphorus. Crystals are layered and display strong Raman signals, sharp XRD peaks. Crystals are 99.9995-99.9998% pure and perfectly layered. Crystals display large single crystal domain with 0.05 degree mosaic spread (monolayers are perfectly stacked onto each other). Ideal for exfoliation down to monolayer phosphorene.
Molybdenum Tungsten Disulfide (MoWS2) 硫鎢鉬
Molybdenum Tungsten Disulfide (MoWS2) 硫鎢鉬
Large single crystal defect free molybdenum tungsten disulfide (Mo0.5W0.05S2) crystals have been developed in our facilities. Molybdenum and Tungsten ratios are set at 50-50%. In the monolayer form, our MoWS2 products show very strong PL at 1.95 eV with intriguing valleytronic and optoelectronic properties.
Rare: Naturally occurring tungsten disulfide (WS2) 二硫化鎢
Tungsten disulfide (2H-WS2) crystals are extremely rare in nature and are less than 10 microns in the quartz / MoS2 matrix. We are currently offering one of a kind naturally occurring WS2 measures more than 1mm in size ready for exfoliation. Currently, there are no reports comparing the optical and electrical properties of naturally occurring WS2 to laboratory grown WS2. Our measurements show that it displays superior quality. The crystals were measured and confirmed by x-ray diffraction (XRD), x-ray photoelectron spectroscopy, Raman, photoluminescence, and Auger electron spectroscopy techniques.
n-type Tungsten disulfide (WS2) 二硫化鎢
n-type Tungsten Disulfide (WS2)二硫化鎢
large n-type WS2 crystals: n-type WS2 monolayer's valleytronics and optical properties remain unknown to date. High quality single crystal n-type WS2 is ideal for monolayer production. Ideal for solving ohmic contact issues for high performance FET, sensor, detector, and solar cell devices.
n-type Tungsten diselenide (WSe2) 二硒化鎢
n-type Tungsten Diselenide (WSe2) 二硒化鎢
large n-type WSe2 crystals: n-type WSe2 monolayer's valleytronics and optical properties remain unknown to date. High quality single crystal n-type WSe2 is ideal for monolayer production. Ideal for solving ohmic contact issues for high performance FET, sensor, detector, and solar cell devices.
n-type Molybdenum disulfide (MoSe2) 二硒化鉬
n-type Molybdenum diselenide (MoSe2) 二硒化鉬
large n-type MoSe2 crystals by 2D semiconductors Inc. n-type MoSe2 monolayer's valleytronics and optical properties remain unknown to date. High quality single crystal n-type MoSe2 is ideal for monolayer production. Ideal for solving ohmic contact issues for high performance FET, sensor, detector, and solar cell devices.
p-type Molybdenum disulfide (MoSe2) 二硒化鉬
p-type Molybdenum diselenide (MoSe2) 二硒化鉬
large p-type MoSe2 crystals by 2D semiconductors Inc. p-type MoSe2 monolayer's valleytronics and optical properties remain unknown to date. High quality single crystal n-type MoSe2 is ideal for monolayer production. Ideal for solving ohmic contact issues for high performance FET, sensor, detector, and solar cell devices.
CVD MoS2 硫化鉬
CVD monolayer MoS2 硫化鉬
Large area CVD MoS2 monolayers are grown onto variety of substrates (SiO2, HfO2, and sapphire). The MoS2 monolayers are highly crystalline and luminescent. Ready for research and development.
CVD WS2 硫化鎢
CVD monolayer WS2 硫化鎢
Large area CVD WS2 monolayers are grown onto variety of substrates (SiO2, HfO2, and sapphire). The WS2 monolayers are highly crystalline and luminescent. Typical sample contains multiple flakes. Ready for research and development.
perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS)
perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS)
Ideal material for monolayer metal sulfide (MoS2, WS2, NiS2, etc.) growth. Spin coating PTAS (in DI) onto various substrates provides an easier route for metal sulfide synthesis. Each order contains PTAS that is enough for at least 1-2 months of growth.
Monolayer Molybdenum diselenide 二硒化鉬
Monolayer MoSe2 二硒化鉬
Monolayer molybdenum diselenide (1H-MoSe2) flakes have been exfoliated from molybdenum diselenide onto 90nm thermal oxide. Each flake has been tested with Raman and PL measurements. Exfoliated monolayers are easy to locate and each sample generally contains more than one monolayer flake.
Monolayer Tungsten diselenide 二硒化鎢
Monolayer WSe2 二硒化鎢
Monolayer molybdenum diselenide (1H-WSe2) flakes have been exfoliated from tungsten diselenide onto 90nm thermal oxide. Each flake has been tested with Raman and PL measurements. Exfoliated monolayers are easy to locate and each sample generally contains more than one monolayer flake.
Monolayer Tungsten disulfide 二硫化鎢
Monolayer WS2 二硫化鎢
Monolayer molybdenum diselenide (1H-WS2) flakes have been exfoliated from tungsten disulfide onto 90nm thermal oxide. Each flake has been tested with Raman and PL measurements. Exfoliated monolayers are easy to locate and each sample generally contains more than one monolayer flake.
Monolayer Tin diselenide 二硒化錫
Monolayer SnSe2 二硒化錫
Monolayer Tin diselenide flakes have been exfoliated from bulk SnSe2 crystals onto 90nm thermal oxide and measures from 5micron up to 40micron in size. Each sample contains at least one single-layer SnSe2 and is easy to find with the given x and y coordinates. Full characterization is performed on each 2D semiconductor monolayer flake.
Monolayer Molybdenum disulfide 二硫化鉬
Monolayer MoS2 二硫化鉬
Monolayer molybdenum disulfide (1H-MoS2) flakes have been exfoliated from molybdenum disulfide (2H-MoS2) onto 90nm thermal oxide. Each flake has been tested with Raman and PL measurements. Exfoliated monolayers are easy to locate and each sample generally contains more than one monolayer flake. Click 'more info' for detailed product description.
Monolayer Rhenium diselenide 二硒化錸
Monolayer ReSe2 二硒化錸
Monolayer Rhenium diselenide flakes have been exfoliated from bulk ReSe2 crystals onto 90nm thermal oxide and measures from 5micron up to 40micron in size. Each sample contains at least one single-layer ReSe2 and is easy to find with the given x and y coordinates. Full characterization is performed on each 2D semiconductor monolayer flake.
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