SiO2/Si基底CVD石墨烯,石墨烯套裝，SiO2基底單層石墨烯，SiO2基底單/雙層石墨烯 |
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CVD石墨烯：SiO2/Si基底
CVD Graphene on SiO2/Si
Graphene Film Trial Kit, 石墨烯套裝
Monolayer Graphene on 285 nm SiO2 Wafer,
285nm SiO2基底單層石墨烯
Monolayer Graphene on 90 nm SiO2 Wafer,
90nm SiO2基底單層石墨烯"
Single/Double Layer Graphene on 285 nm Silicon Dioxide Wafer, 285nm SiO2基底單/雙層石墨烯
Single/Double Layer Graphene on 90 nm Silicon Dioxide Wafer,
90nm SiO2基底單/雙層石墨烯
CVD石墨烯：SiO2/Si基底 CVD Graphene on SiO2/Si |
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| Graphene Film Trial Kit 石墨烯膜套裝 |
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Includes: Two Single/Double Layer Graphene samples on 285 nm Silicon Dioxide Wafers: 1cm x 1 cm Two 10mmx10mm samples, Graphene Film on Nickel: 1 cm x 1 cm One sample of Multilayer Graphene on a 285 nm Silicon Dioxide Wafer: 1 cm x 1 cm One sample of Monolayer Graphene on a 285 nm Silicon Dioxide Wafer: 1 cm x 1 cm One sample of Monolayer Graphene on Glass: 1" x 1" If you are interested in investigating numerous different samples of graphene coatings, this trial kit is ideal. All of the samples are made by Chemical Vapor Deposition and give a strong Raman signal. A great value for students and scientific researchers alike interested in trying different samples. |
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| Monolayer Graphene on 285 nm SiO2 Wafer 285nm SiO2基底單層石墨烯 |
4” (100mm) wafer |  |
Monolayer graphene on silicon wafers (p-doped) with a 285 nanometer silicon dioxide coating. Properties of Graphene Film: The thickness and quality of our graphene films is controlled by Raman Spectroscopy The graphene coverage of this product is about 95% The graphene film is continuous, with occasional holes and cracks The graphene film is polycrystalline, i.e. it consists of grains with different crystallographic orientation Sheet Resistance: 660-1,500 Ω/□ Our graphene films are predominantly single-layer graphene (more than 97%) with occasional small multilayer islands. Properties of Silicon/Silicon Dioxide Wafers: Oxide Thickness: 285 nm Color: Violet Wafer thickness: 525 micron Resistivity: 0.001-0.005 ohm-cm Type/Dopant: P/Boron Orientation: <100> Front Surface: Polished Back Surface: Etched Our graphene films are manufactured using a PMMA assisted transfer method. 拉曼光譜圖 / 光學(xué)圖像 / 4” (100mm) wafer 尺寸圖 |
| 10mm×10mm 10片 |  |
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| 10mm×10mm 5片 |  |
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| Monolayer Graphene on 90 nm SiO2 Wafer 90nm SiO2基底單層石墨烯 |
10mm×10mm 5片 |  |
Monolayer graphene on silicon wafers with 90 nanometer silicon dioxide coating. Properties of Graphene Film: The thickness and quality of our graphene films is controlled by Raman Spectroscopy The graphene coverage of this product is about 95% The graphene film is continuous, with occasional holes and cracks The graphene film is polycrystalline, i.e. it consists of grains with different crystallographic orientation Sheet Resistance: 660-1,500 Ω/□ Our graphene films are predominantly single-layer graphene (more than 97%) with occasional small multilayer islands. Properties of Silicon/Silicon Dioxide Wafers: Oxide Thickness: 90 nm Color: Violet Wafer thickness: 525 micron Resistivity: 0.001-0.005 ohm-cm Type/Dopant: P/Boron Orientation: <100> Front Surface: Polished Back Surface: Etched Our graphene films are manufactured using a PMMA assisted transfer method. 拉曼光譜圖 / 光學(xué)圖像 |
| Single/Double Layer Graphene on 285 nm Silicon Dioxide Wafer 285nm SiO2基底單/雙層石墨烯 |
10mm×10mm 10片 | |
Mono and bilayer graphene on silicon wafers (p-doped) with a 285 nanometer silicon dioxide coating. The samples have nearly full monolayer coverage with 10-30% coverage of bilayer graphene islands. They are a great low-cost alternative to monolayer graphene for select purposes. Properties of Graphene Film: The graphene coverage of this product is about 95% The graphene film is continuous, with occasional holes and cracks The graphene film is polycrystalline, i.e. it consists of grains with different crystallographic orientation Properties of Silicon/Silicon Dioxide Wafers: Oxide Thickness: 285 nm Color: Violet Wafer thickness: 525 micron Resistivity: 0.001-0.005 ohm-cm Type/Dopant: P/Boron Orientation: <100> Front Surface: Polished Back Surface: Etched Our graphene films are manufactured using a PMMA assisted transfer method. 光學(xué)圖像 / 典型SEM圖像 |
| Single/Double Layer Graphene on 90 nm Silicon Dioxide Wafer 90nm SiO2基底單/雙層石墨烯 |
10mm×10mm 10片 | |
Mono and bilayer graphene on silicon wafers (p-doped) with a 90 nanometer silicon dioxide coating. The samples have nearly full monolayer coverage with 10-30% coverage of bilayer graphene islands. They are a great low-cost alternative to monolayer graphene for select purposes. Properties of Graphene Film: The graphene coverage of this product is about 95% The graphene film is continuous, with occasional holes and cracks The graphene film is polycrystalline, i.e. it consists of grains with different crystallographic orientation Properties of Silicon/Silicon Dioxide Wafers: Oxide Thickness: 90 nm Color: Violet Wafer thickness: 525 micron Resistivity: 0.001-0.005 ohm-cm Type/Dopant: P/Boron Orientation: <100> Front Surface: Polished Back Surface: Etched Our graphene films are manufactured using a PMMA assisted transfer method. 光學(xué)圖像 / 典型SEM圖像 |
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